Far-infrared emission from graphene on SiC by current injection

نویسندگان

چکیده

Abstract The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform spectroscopy. radiation directivity from the emitter was observed in directions perpendicular to surface edge sample. energy density larger than that all directions. maximum measured temperature change at 0.4 W for 76.1 K a tilt angle 50° 54.1 0°. A blackbody-like spectrum with constant peak wavelength 10.0 μ m, regardless applied electrical power, both edge. light successfully realized single-crystal SiC.

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ژورنال

عنوان ژورنال: Japanese Journal of Applied Physics

سال: 2022

ISSN: ['0021-4922', '1347-4065']

DOI: https://doi.org/10.35848/1347-4065/ac5423